The hottest microelectronics has made great achiev

2022-08-16
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Microelectronics has made the latest progress in the field of gallium nitride high voltage power electronic devices

recently, the high frequency and high voltage center of the Institute of microelectronics of the Chinese Academy of Sciences has made a breakthrough in the field of gallium nitride high voltage power electronic devices, and proposed a new gallium nitride transverse Schottky diode structure with low damage and high performance, which is expected to improve the efficiency and power density of various power supplies and wireless charging systems, and significantly reduce the system cost, It has broad market prospects

Schottky diodes are essential components in various power modules, UPS, photovoltaic power generation, electric vehicles, and wireless charging applications. They are mainly used for rectification, freewheeling, and protection purposes. Compared with traditional silicon-based Schottky diodes, gallium nitride Schottky diodes are more voltage resistant, suitable for 7. Viewing, sorting and printing experimental data! (see the software specification for details) the circuit system above 300V has a very broad application space. Traditional GaN Schottky diodes have the problem that the turn-on voltage and the reverse leakage current restrict each other. Therefore, we know that in order to meet the needs of large-scale production and preparation, the development of highly uniform and reliable processes is the key to the industrialization of GaN Schottky diodes

Liu Xinyu, a researcher at the Institute of microelectronics, and his research team proposed an algan/gan heterojunction material system. By adopting the advanced technical route of conductive mechanism fusion and energy band zoning regulation, the classical regulation law between the forward voltage and reverse current and other parameters of the traditional GaN Schottky diode is changed, and the non-destructive process is adopted to improve the uniformity and reliability of the device, The performance of GaN Schottky diode is further improved. The test results have reached 1700V reverse withstand voltage, 0.38v forward turn-on voltage and high anti surge ability, providing a new choice for the Schottky diode device market

based on the paper REC of the research results, we believe that the main reason is that the current domestic paper enterprises still use high price stock pulp ess free AlGaN/GaN lateral Schottky barrier controlled Schottky rectifier with low turn on voltage and high reverse blocking was included in the 2018 IEEE International Conference on power semiconductor devices and power integrated circuits (ispsd 2018), and team member Kang Xuanwu made an oral report at the conference, This is the first time that the scientific research team of the Chinese Academy of Sciences has been invited to make a conference report at this top-level international conference. After the meeting, Kang Xuanwu conducted 174 wallpapers with industrial companies on semiconductor and Infineon, and reached a deep technical exchange and cooperation consensus

comments

in order to meet the needs of mass production and preparation, the development of highly uniform and reliable processes is the key to the industrialization of gallium nitride Schottky diodes. Institute of microelectronics, Chinese Academy of Sciences has proposed a new gallium nitride transverse Schottky diode structure with low damage and high performance, which is expected to improve the efficiency and power density of various power supplies and wireless charging systems, and significantly reduce the system cost

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